KEYNOTE TALK 3:
The Rapidly Evolving World of 5G Power Amplifiers
Peter Asbeck, University of California, San Diego, CA, USA.
Abstract: Power amplifier technology has been advancing at a furious pace to meet the challenges posed by 5G: higher carrier frequencies, wider signal bandwidths, higher peak-to-average power ratios and more complex signal constellations, all without sacrificing efficiency. There is vigorous competition between device technologies: SiGe HBT, CMOS, GaAs, GaN and InP. This talk reviews recent directions for progress, and problems remaining to be solved. In sub-6GHz PAs, 200MHz signal bandwidths and wide carrier frequency range (3.4-4.2GHz) are now available with good efficiency. Doherty and outphasing amplifiers have been demonstrated at 28GHz with more than 25% power-added efficiency at 6dB backoff. Amplification of 64QAM OFDM signals with 0.8 to 2GHz bandwidths without predistortion has been widely reported; analog predistortion is also receiving attention along with DPD. Integration with LNAs and switches is also straightforward in most cases. Despite lingering uncertainties about system and PA specifications, system designers can anticipate that most of their expectations will be met. Increased attention is being given to ruggedness, reliability, ease of calibration, and, of course, cost. Potentially multiband or even full-duplex operation will emerge in the future.
Speaker's Bio: Peter Asbeck is a Professor in the Department of Electrical and Computer Engineering at the University of California, San Diego, and member of UCSD’s Center for Wireless Communications. His research centers on high performance transistor technologies and their application to wireless power amplifiers. He attended MIT, where he received the B.S. and Ph.D. degrees in 1969 and in 1975, respectively. From 1978 to 1991, he was with Rockwell International Science Center, where he was involved in the development of high speed devices and circuits using III-V compounds and heterojunctions. Dr. Asbeck is a member of the U.S. National Academy of Engineering, and has been a Distinguished Lecturer of the IEEE Electron Device Society, and of the Microwave Theory and Techniques Society. He received the 2003 IEEE David Sarnoff Award for his work on heterojunction bipolar transistors, and the 2012 IEEE MTT Distinguished Educator Award.